SI2302DS,215;中文规格书,Datasheet资料.pdfVIP

SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using 1 TrenchMOS™ technology. Product availability: SI2302DS in SOT23. 2. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications Battery management High speed switch Low power DC to DC converter. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) 3 2 source (s) d 3 drain (d) g 1 2 MBB076 s Top view MSB003 SOT23 1. TrenchMOS is a trademark