材料科学与工程基础12 13思考题.pdf

第十二次 思考题 4-39试述影响离子电导率和电子电导率的主要影响因素 离子电导率： 温度：温度越高，电导率越大 晶体结构：离子大小、电荷影响电导率 晶格缺陷：离子性晶格缺陷的生成及浓度大小是 决定离子电导的关键 电子电导率(金属）：散射 温度 σ∝T-1 杂质及缺陷 杂质原子（离子）引入新的局部能级 塑性形变 位错 4-47.在下列高聚物材料中，哪些有 可能利用高频塑化法加工成型？（1） 酚醛树脂；（2）聚乙烯；（3）聚 苯乙烯；（4）聚氯乙烯 •4-47 聚氯乙烯 12.8 In terms of electron energy band structure, discuss reasons for the difference in electrical conductivity between metals, semiconductors, and insulators. 12.9 If a metallic material is cooled through its melting temperature at an extremely rapid rate, it will form a noncrystalline solid (i.e., a metallic glass). Will the electrical conductivity of the noncrystalline metal be greater or less than its crystalline counterpart? Why? 电导率降低。英文书P374，和P375- 图12.8 12.21 (a) Compute the number of free electrons and holes that exist in intrinsic germanium at room temperature, using the data in Table 12.2. (b) Now calculate the number of free electrons per atom for germanium and silicon (Example Problem 12.1). (c) Explain the difference. You will need the densities for Ge and Si, 3 which are 5.32 and 2.33 g/cm , respectively. Solution: (a) n=p= /[|e|( + )] e h -1 -19 2 =2.2( -m) [(1.610 C)(0.38+0.18 m /V-s)] = 2.461019 m-3 (b) for Ge: Number of atoms: N= (/M)NA 6 3 23 = [5.3210 (g/m ) 72.59(g/mol)]6.0210 =4.411028 m-3 每个原子自由电子数=n/N=(2.461019 m-3 )/(4.411028 m-3 ) =5.610-10 for Si: Number of atoms: N= (/M)NA 6 3 23 = [2.2310 (g/m ) 28.1(g/mol)]6.0210 =4.7 1028 m-3 n=p= /[|e|( + )] e h -4 -1 -19