硅薄膜太阳电池电极接触特性的研究-凝聚态物理专业论文.docxVIP

薄膜表面进行腐蚀，并研究了其织构的影响因素：在制备薄膜时需要很好 薄膜表面进行腐蚀，并研究了其织构的影响因素：在制备薄膜时需要很好 的掌握反应气压的最佳点，既保证优良的光电特性又要能腐蚀出一定的绒 度。同时，只有在恰当温度范围内制备的ZnO：Al薄膜腐蚀后才会得到适 合我们要求的绒面结构； (4)在此基础上又对不同织构ZnO：Al与p-pc-Si：H薄膜的接触特性进行了研究 和分析。在织构后的ZnO：Al上沉积的p-pc-Si：H薄膜的晶化率均大于在未 织构的ZnO：AI上沉积的P．pc．-Si：H薄膜，且它们的接触电阻也均小于未织 构的。说明绒面有利于p-pc-Si：H薄膜的晶化；织构时间为15s的ZnO：AI衬 底上沉积的p-pc—Si：H薄膜的晶化率较高，且其接触电阻也较低，即织构时 间存在最佳点；如略微增大硼掺杂浓度(O．1％-0．15％)的话，其变化规 律与轻掺杂的相同，总体来说接触特性变差：在不同织构时问的ZnO：AI 衬底上沉积的p-pc-Si：H薄膜的晶化率均下降，且接触电阻均变大； (5)对背电极的接触也作了一些研究：①对于电子柬蒸发制备的ZnO：AI薄 膜，掺杂浓度存在一拐点，当掺杂浓度为2．5％时n-a-Si：H／ZnO：Al的接触电 阻最小，这是因为在掺杂浓度为2．5％时ZnO：Al薄膜的电阻率最小；②保 持掺杂浓度为2．5％时，改变ZnO：Al膜的厚度，在厚度变化不大的情况下， n-a-Si：H／ZnO：Al的接触电阻随着ZnO：A1厚度的增加而增大。分析认为，厚 度变化不大时，薄膜的性能基本相同(电阻率和结晶度差别不大)，但体 电阻随着厚度的增加而增加；③磁控溅射制备的ZnO：AI薄膜， n-a-Si：H／ZnO：Al的接触电阻随着厚度的增加而不断减小，这是因为磁控溅 射制备的ZnO：Al薄膜随着厚度的增加，结晶度不断变好，ZnO：AI薄膜的 电阻率不断减小。 关键词：硅薄膜电池 透明导电膜 掺杂膜 等离子体化学气相沉积 接触 特性 n AbstractAs Abstract As aIl unexhausted clean energy,the utility and development of solar energy is paid more attention by people．Crystalline thin films solar cell has more merits：hi【曲 conversion efficiency of crystal silicon solar cells,long lifetime ofbulk silicon solar cells，simple manufacturing processing ofa-Si thin films solar cell． Crystalline thin films solar cell consist of several layers of different chemical composition and hence different optical and electronic properties．The structure of solar cell is glass／TCO／pin or nipfrCO／Al or Ag in this text．There ale interface effect beM啪different layers，and the properties of solar cell is influenced by them． TCO／p，p／i and nflCO／A1 are important interfaces．We mainly research on the contact characteristic ofTCO／p and nfrco． The experiments include： (1)p-Si：H were deposited Oil different TCO(Sn02，ZnO：AI，SnOgZnO：AI)by PECVD，the contact characteristic ofdifferent TCO and p-Si：H Was studied； (2)ZnO：A1 were texture,then the influencing factors 011．rough surface of ZnO：AI are researched．p-pc-Si：H were deposited on different roughness ZnO：AI by PECVD．then the contact characteristic of diffe