镍矽氧化物与镍矽氮化物奈米点在非挥发性记忆体应用之研究.PDF

(NVM) (Reliability) (floating gate) (Retention) (Endurance) (Ni-Si-O) (Ni-Si-N) Ar/O 2 sputtering Ni Si (SiO ) 0.3 0.7 x (Ni-Si-O) 12 -2 (~10 cm ) I Ar/N Ni Si 2 0.3 0.7 (Ni-Si-N) , (SiN ) x crystalline) (defect) II Study on the Application of Ni -Si-O and Ni-Si-N Nanocrystal for Nonvolatile Memory Student: Jui-Lung Yeh Advisor: Dr. Jen-Chung Lou Dr. Ching-Fa Yeh Department of Electronic Engineering and Institute of Electronics College of Electrical Engineering and Computer Science National Chiao Tung University Abstract Current requirements of nonvolatile memory (NVM) are the high density cells, low-power consumption , high-speed operation and good reliability for the scaling down devices. However, all of the charges stored in the floating gate will leak into the substrate if the tunnel oxide has a leakage path in the conventional NVM during endurance test . Therefore, the tunnel oxide thickn