面内场对枝状畴畴壁中VBL稳定性的影响-凝聚态物理专业毕业论文.docxVIP

摘 摘 要 本文茸次研究了在面内场的作用下，用“低直流偏场法”产生的 技状畴畴壁中VBL的消失规律。实验发现，用“低直流偏场法”产生 的liD枝状畴在面内场作用下的软化存在一个临界面内场范围 [H≯，日。／】。在这个临界面内场范围内，畴壁中的VBL是逐渐丢失的。 本实验还对经过直流偏场压缩的枝状畴和未经过直流偏场压缩的枝状 畴在面内场作用下的软化过程进行了比较，实验发现，经过直流偏场 压缩的枝状畴在面内场的作用下软化时，对应R他=0时的面内场值 是不同的。随着产生枝状畴时的直流偏场的增加，枝状畴在R。=0 时所对应的面内场值是逐渐减小的，证明了枝状畴畴壁中的VBL是随 几分布的，也从另外。。个角度证明了在面内场作用下VBL的消失存在 一个最易方向。 另外，为了更加准确地测定OHB畴壁中的VBL软化的临界面内 场范围，本文对经过筛选的OHB在爿。作用下其畴壁中VBL的消失 规律给予了研究。用这种经过改进的实验方法进行测量的时候，在 H，软化的起始值，OHB就会有较高的软化率，这就给实验上的观察 带来了方便，并且准确率也比较高。所以在本文中用比较准确的实验 带来了方便，并且准确率也比较高。所以在本文中用比较准确的实验 方法测得了OHB畴壁中的VBL在面内场的作用下，存在一个与材料 参量相关的临界面内范围【日≯，1-／,A，并且也证明了在临界面内场 圩等’时丢失VBL的OHB对应的是那些含VBL较少的OHB。 关键词：磁畴壁垂直布洛赫线面内场 AbstraetThe Abstraet The annihilation ofVertical Bloch Line(VBL)chains in the walls of multi—branched domains(MBD)subject tO an in—plane field was studied experimentally for the first‘time．It was shown that VBLs in the walls of MBD which was formed by using the low static bias fields gradually anni|lilated，and a critical in-plane field range[Ⅳ≯，H：】was also found The MBDs in the compressed state and the MBDs in the uncompressed state was compared in the experiment．It was shown that the value ofthe in—plane XVaS differenl at R im=0、=vberl the MBDs in the compressed state was softened，The value of the in—plane Was decreasing at Rill)=0 with the increase of the static bias fields，thus it is proved that VBL in the wails of MBD is irregular and there exists a direction aiong which the VBL in the domain walls annihilate most easily In addition，in the paper we also studied the annihilation of ordinary hard bubbles(OHB)by screening in order to measure accurately the critical in—plane field range．In the improved experiment the softening percentage of OHB OHB was large at the critical in-plane field日≯，thus the critical in—plane field range[H猡’，Ⅳ；]related to the paran]eters of the samples was measured accurately in the paper．Meanwhile facts have proved that OHB including less VBL is OHB which will lose VBL at the critical in．plane field H譬 Keyword：Domain wal