取向生长Bi4Ti3O12铁电薄膜的回线动力学标度毕业论文.docVIP

第一章 铁电材料综述 PAGE 40 PAGE 5 本科毕业论文(设计) 题 目：取向生长Bi4Ti3O12铁电薄膜的回线动力学标度 摘 要 稀土掺杂层状钙钛矿结构的Bi4Ti3O12铁电薄膜具有居里温度高，自发极化大，耐疲劳性好的特点，适用于制作铁电储存器。由于Bi4Ti3O12铁电薄膜的自发极化矢量靠近a轴，近a轴生长的Bi4Ti3O12铁电薄膜具有大的剩余极化强度。 对比研究了随机取向Bi4Ti3O12铁电薄膜和a/b轴择优取向Bi4Ti3O12铁电薄膜的回线动力学标度。结果表明a/b轴高择优取向度的Bi4Ti3O12铁电薄膜的标度关系为：低频段A∝f0.043E0 0.8；高频段A∝f -0.21E00.8。a/b轴低择优取向度的Bi4Ti3O12铁电薄膜的标度关系为：A∝f -0.05E00.917。随机取向Bi4Ti3O12铁电薄膜的标度关系在高频和低频统一为A∝f -0.07E01.31。 Abstract The rare-earth doped Ferroelectric Bi4Ti3O12 of layered-perovskite which has high Curie temperature , large spontaneous polarization and good fatigue resistance, is one of the candidate materials for nonvolatile ferroelectric memory application.Due to the spontaneous polarization of the Bi4Ti3O12 thin films is close to the a-axis, the a-axis (or near a-axis) growth Bi4Ti3O12 thin films has a large remanent polarization. The scaling behavior of the dynamic hysteresis on a/b-axes oriented and randomly oriented Bi4Ti3O12 thin films was investigated. The scaling relations of a/b-axes oriented Bi4Ti3O12 of high preferential orientation degree thin films were A∝f 0.043E00.8 when f 1/?e and A∝f ?0.21E00.8when f 1/?e.The scaling relations of a/b-axes oriented Bi4Ti3O12 of low preferential orientation degree thin films were A∝f ?0.05E00.917 .While the scaling relations of randomly oriented Bi4Ti3O12 thin films A∝f ?0.07E01.31. 目 录 TOC \o 1-3 \h \z \u 第一章 铁电材料综述 h 1 1.1铁电材料的定义 h 1 1.2铁电薄膜 h 2 1.3取向生长Bi4Ti3O12铁电薄膜 h 3 第二章 动力学标度及其意义 h 4 2.1电滞回线的产生 h 4 2.2回线动力学标度 h 4 2.3进行回线动力学标度的意义 h 4 2.4铁电材料动力学标度的研究现状 h 5 第三章 实验方法 h 7 3.1实验方案 h 7 3.2测量电滞回线的原理和方法 h 7 3.3数据处理方法 h 8 第四章 Bi4Ti3O12薄膜的回线动力学标度 h 10 4.1随机取向Bi4Ti3O12铁电薄膜（1#）的回线动力学标度 h 10 4.2 a/b轴择优取向Bi4Ti3O12薄膜（2#）的回线动力学标度 h 12 4.3a/b轴择优取向Bi4Ti3O12薄膜（3#）的回线动力学标度 h 14 4.4 Bi4Ti3O12铁电薄膜的标度关系的比较及结论 h 16 结论 h 19 致 谢 h 20 参考文献 h 21 青岛大学本科毕业论文（设计） 第一章 铁电材料综述 1.1铁电材料的定义 铁电材料定义为具有自发极化且自发极化方向可随外电场翻转的电介质材料。自发极化是由于晶胞内原子位置变化导致正负电荷中心不重合而产生的。宏观表现为极化矢量与外电场之间存在