利用高分辨X射线衍射仪表征GaN2fAl_2c2_O_2c3_薄膜结构特性.pdfVIP

南昌大学硕士论文 ————————————————————————————————————————————————————————————一 Abstract Inrecent years，GaN—based materialsand optoelectronic deviceshave been hasnotfull rapidlydeveloped，however，therestudiedinGaNthin films．Manv theoreticaland studiesshouldbe experimental focusedonthe GaN-baSedmaterials and these affected properties，especially industrialization．So problems all far,aimost ofthe are onthe of publishedpapersregarded dislocations density inGaN． threading studies Many havebeendoneondifferent studiedthe approaches of density dislocations of as threading GaN，suchTransmissionelectron microscopy(TEM)， theresultswhich X。raydiffraction(XRD)，butmeasuredthese arenot by approaches witll luminescence． consistency Inthis thebasisof thesis，on the and analysis of advantages the disadvantages usu