射频功率放大器的研究与设计-电磁场与微波技术专业论文.docxVIP

华中科技大学硕士学位论文Abstract 华中科技大学硕士学位论文 Abstract The Radio Frequency Power Amplifier(RFPA)is one of most important equipments in the modem wireless communicafions，and they are widely applied in the Radar,wireless communications，navigation,satellite communications system．As compared t0 traditional traveling Wave amplifier，RF solid-state PA have high dynamic range，compactness，low power dissipation merits．RF PA have become very important in the military and personal communications system,and it becomes extremely important to develop the RF PA． Therefore，research and design RF PA have great significance． For RF PA，always require it Can output a certain power within a range of fiequency， at the same time meeting the system nonlinear requirements and have high conversion efficiency．RF PA almost working in large signal，SO it’S circuit design methods and transistor used are different from microwave small signal amplifier，these will led to RF PA design become more difficulty． The GaAs FET devices are widely used in design RF PA for the characteristics of low noise，High efficiency，good linear@．We discuss the model of active device in this paper, analyze the amplifier’S gain and stability by use the S parameter．And point out the impedance matching network and bias network implement method，several major RF PA design methodS is summarized．There are two development for the Middle Power Amplifier： the drive stage power amplifier and the last stage power amplifier．We simulate the circuit with the Agilent ADS，After select the most suitable topology structure of circuit，we simulate the biasing cimuit，input and output matching circuit．Through the method of the small signal S parameters and the nonlinear designing method，we design and simulate the drive stage and last stage power amplifier with ADS software，point out some problem in the design procedure．At last,we analyze deficiency ofthe circuit and draw a summary． Keywords：RF power amplifier GaAs MESFET CAD simulation II 独创性声明本人声明所呈交的学位论