数字电路英文版-第十二单元.ppt

The Burst Feature Synchronous SRAMs normally have an address burst feature, which allows the memory to read or write at up to four locations using a single address. Burst Logic KEY TERMS Access time The time from the application of a valid memory address to the appearance of valid output data. Address The location of a give storage cell or group of cells in a memory. Bus A set of interconnections that interface one or more devices based on a standardized specification. Byte A group of eight bits. Cache memory A relatively small, high-speed memory that stores the most recently used instructions or data from the larger but slower main memory. Capacity The total number of data units (bits, nibbles, bytes, words) that a memory can store. CD-R CD-Recordable; an optical disk storage device on which data can be stored once. CD-ROM An optical disk storage device on which data is prestored. CD-RW CD-Rewritable; an optical disk storage on which data can be written and over-written many times. Cell A single storge element in a memory. DIMM Dual in-line memory module. DRAM Dynamic random-access memory; a type of semiconductor memory that uses capacitors as the storage elements and is a volatile, read/write memory. EFT Field-effect transistor. FIFO First in-first out memory. DVD-ROM Digital versatile disk-ROM; also known as digital video disk-ROM; a type of optical storage device on which data is prestored with a much higher capacity than a CD-ROM. Dynamic memory A type of semiconductor memory having capacitve storage cells that lose stored data over a period of time and, therefore, must be refreshed. EEPROM Electrically erasable programmable read-only memory; a type of semiconductor memory device. EPROM Erasable programmable read-only memory; a type of semiconductor memory device that typically uses ultraviolet light to earse data. Flash memory A nonvolatile read/write random-access semiconductor memory in w