反应溅射制备高透明导电zno f个zo及azo薄膜的研究.docxVIP

薄膜厚度；结晶度II 薄膜厚度；结晶度 II 万方数据 AbstractZnO—based Abstract ZnO—based thin films，one of the most possible candidates to ITO thin films，have attracted considerable interests of researchers．Different from usually used metal or oxide target，Zn／ZnO and Zn／ZnO／ZnF2 mixtures as well as Zn／ZnO mixture with surface attached with A1 strips(Al@Zn／ZnO)were used as targets in this paper．By magnetron sputtering these three targets，ZnO，F-doped ZnO(FZO)and Al-doped ZnO (AZO)thin films were prepared under atmosphere of AY+02 or p汀+H2 and substrate temperature(Ts)of 1 50 or 300 oC．The effects of Ts and reactive gas(02 or HE)flux on the structure and transparent conductive properties of the films were investigated by interference microcopy,XRD，Hall effect measurement instrument and UV-Vis spectrophotometer，． The results indicate thickness of three films obviously increases with 02 flux but tends to decrease with HE flux．At higher Ts，the thickness of films prepared in Ar+H2 atmosphere decreases，but that in Ar+02 atmosphere has not obvious change．In addition,only diffraction peaks of wurtzite structured ZnO are observed in three films although the Zn,ZnF2 and A1 phases exist in the targets． Only at suitable fluxes of 02 or H2，the ZnO and FZO films show(002)preferred orientation,lower compressive stress and higher crystallinity,and high concentration of Vo and／or Hi defects can be formed at the same time，which results in the films with loW resistivity．The films have higher transmittance at the same time，and thus the films with higher figure of merit(FOM)are obtained at suitable fluxes of 02 or HE．Compared with the films deposited at Ts of 1 50。C，the films deposRed at Ts of 300。C have higher crystallinity and keep the strong(002)preferred orientation at all the 02 or H2 fluxes．As Ts increases，the conductive properties of the films deposited in AF+02 atmosphere enhances and thus the FOM of the films improve，but conductive properties of the films deposited in心+H2 atmosphere degrade，which cau