高电荷态离子与固体表面相互作用机理研究力毕业论文.docx

高电荷态离子与固体表面相互作用机理研究力毕业论文.docx

高电荷态离子与固体表面相互作用机理研究力毕业论文

兰州大学博:l:研究生学位论义并结合实验结果,讨论了表面的电子激发对势能溅射过程的可能贡献。 兰州大学博:l:研究生学位论义 并结合实验结果,讨论了表面的电子激发对势能溅射过程的可能贡献。 利用高电荷态Xeq+离子入射到云母材料表面,通过原子力显微镜(AFM) 观察到了表面的丘状纳米突起,初步建立了表面纳米缺陷直径及高度与入射 离了势能和动能的关系。估算了形成此种纳米缺陷对应的移位原子数。同时 介绍了在方向上最新的实验研究结果。 在高电荷态Xeq+(q=5~26)离子辐照高定向石墨(Highly Oriented Pyrolytic Graphite,HOPG)表面的实验中,利用Raman光谱和XPS(X.ray Photoelectric Spectroscopy)测量,观测到了石墨表面结构由sp2向sp3杂化的 现象,表明在石擞表面有类金刚石结构的生成。讨论了此转化过程与入射离 子势能和入射剂量间的关系。通过改变入射离子动能,发现对于速度较慢的 离__f,它能将更大比例的势能沉积到材料表面区域,从而更加有效地在石墨 表面产生类金刚石结构。 关键词:高电荷态离子,势能溅射,阈值效应,能损增强,表面纳米缺陷, 类金刚石结构,金属,云母,高定向石墨 ¨ 兰州大学博‘l:研究牛学位论文Abstract 兰州大学博‘l:研究牛学位论文 Abstract Highly Charged Ion(HCI)is the ion in high charge state,which is produced by the toss of most or all of the atom’S bounded electrons.The most outstanding feature is the great amount of potential energy carried by HCI.The study on the interaction of HCI and material attracts great interests in astrophysics,atomic physics,radiation biology,nano—material and the design of fusion reactor.Due to the unique property of HCI,it has the very special application in surface analysis and surface modification at the nanoscale,thus the HCI has been expected as a new generation tool for the microelectronic engineering.Additionally,HCI is the favorite candidate in medical application of heavy ion therapy since the special interaction between the well-accelerated HCI and organics. In this thesis,we introduced:the special properties of HCI;the HCI facilities e.g.Electron Cyclotron Resonance Ion Source(ECRIS)and Electron Beam Ion Trap(EBIT);as well as the proposed theory models and the experimental results in this study field.In work,the studies of sputtering produced by HCI interaction with various solid surfaces were reported first.The work about hillock—like nanodefect induced by bombardment of HCI mica surface was also introduced.Last,the investigation on the diamond—like carbon production by impacting of HCl on HOPG surface was presented. On the study of sputtering induced by HCI,the highly charged Arq+(

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