课件：WABasicInroducion.ppt

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2019-07-08 发布于广东
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课件：WABasicInroducion.ppt

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In linear region: In Saturation region: When Id =Idsat, Vd=VG-Vth, and So, Transistor WAT parameters and test condition: 1. VTGm_N: VD=0.05V, VS=VB=0V,VG=0 to 0.8*1.8V, whereas 1.8V is VDDN extrapolate to VG at max slope, measure VTGm_N = VG(INTERCEPT) - 0.5*VD 2. VTLIN_N: VD=0.05V, VS=VB=0V,VG=0 to 0.8*1.8V, whereas 1.8V is VDDN Measure VTLIN_N=VG @ ID=0.1uA*(W/L) [To simplify the calculation, the transistor was considered turned on when ID=0.1uA*(W/L)] Typical Value: VTLIN_N_10/10 = 0.37V VTLIN_P_10/10= -0.44V VTLIN_N_10/0.18= 0.44V VTLIN_P_10/0.18 = -0.5V VTLIN_N_0.22/10 = 0.31V VTLIN_P_0.22/10 = -0.41V VTLIN_N_0.22/0.18 = 0.36V VTLIN_P_0.22/0.18 = -0.5V VTLIN_N3.3_10/10 = 0.68V VTLIN_P3.3_10/10 = -0.73V VTLIN_N3.3_10/0.35 = 0.72V VTLIN_P3.3_10/0.35 = -0.68V VTLIN_N3.3_0.22/10 = 0.56V VTLIN_P3.3_0.22/10 = -0.68V 3. VTSAT_N: VD=1.8V, VS=VB=0V,VG=0 to 0.8*1.8V, whereas 1.8V is VDDN Measure VTSAT_N = VG @ ID=0.1uA*(W/L) [VD=VDDN, to make sure that the transistor is working at the saturation status] THANK YOU SUCCESS * * 可编辑 4. IDSAT_N: VD=VG=VDDN=1.8V, VS=VB=0, Measure IDSAT_N=ID (then divide by W in some calculation) Typical Value: IDSAT_N_10/0.18 = 6mA IDSAT_P_10/0.18 = -2.59mA (600 uA/um) (-259 uA/um) IDSAT_N_0.22/10 = 4uA IDSAT_P_0.22/10 = -1.1uA IDSAT_N_0.22/0.18 = 180uA IDSAT_P_0.22/0.18 = -60A IDSAT_N3.3_10/0.35 = 6mA IDSAT_P3.3_10/0.35 = -3mA IDSAT_N3.3_0.22/10 = 7.58uA IDSAT_P3.3_0.22/10 = -1.61uA 5. IOFF_N VD=1.1*1.8V, VG=VS=VB=0, Measure IOFF_N = ID (then divide by W in some calculation) Typical Value: IOFF_N_10/0.18 = 60 pA IOFF_P_10/0.18 = -30 pA IOFF_N3.3_10/0.35 = 60 pA IOFF_P3.3_10/0.35 = -35 pA 6. BVD_N VG=VS=VB=0V, VD = 1.8 To 3*VDDN, whereas, VDDN=1.8V or 3.3V, Measure BVD_N=VD @ ID=0.1uA*W Typical Value: BVD_N_10/0.18 = 4V BVD_P_10/0.18 = -5.21V BVD_N3.3_10/0.35 = 7V BVD_P3.3_10/0.35 = -6.99V 7. ISUB_N VD=1.1*1.8V, VS=VB=0, VG = 0.2*