课件：WA电性参数介绍WAarameersinroducion.pptVIP

* Device Part: Gm (Vth,Current Gain) Define:Gm=(ΔId/ ΔVg) Linear: Id=1/2(μCoxW/L)(2(Vgs-Vt)Vds-Vds2) Gm= μCoxW/L ? μ Saturation: Id=1/2(μCoxW/L)(Vgs-Vt)2 Gm= μCoxW/L(Vgs-Vt) Pinch-Off:Vds=Vgs-Vt Gm= μCox(W/L)Vds β= μCox(W/L) PS:If β value abnormal,It may have Gox, Leff or implant issues. Vth Measure method: Step1:Vds=0.1 Vs=Vb=0 and swoop Vg Step2:Plot Ids ? Vgs and Gm ? Vgs curves Step3:find Gm(max),plot slop of this point on Ids Vgs From Linear function set Id=0then Vth=Vgs-V 0 3 Vg Id * Device Part: Idsat (Asym) Define: Idsat=Ids at Vgs=Vds=Vcc Ids Measure method: Step1:Vs=Vb=0,Vd=Vcc and Sweep Vg Step2:Plot Ids ? Vgs Step3:Find Ids at Vg=Vd=Vcc Ids Asymmetry check: Step1:Following the Ids measurement. Step2:Change Drain and Source Pin-assign,then measure Ids’. Step3:Asym=ABS(Ids-Ids’)/Ids PS:If Ids Asymmetry Avnormal, It may have the Isub,(or Poly gate non-overlap issues)or LDD N-Rs, or Contact Rc some things trouble! A SMU2 Vg G D S Sub Vsub SMU3 Id Vd SMU1 * Device Part: Ioff Define: Ids=Ioff at Vgs=Vs=Vb=0,Vds=Vcc Ioff Measure method (Direct meas.): Step1:Vs=Vb=0,Vd=Vcc and Sweep Vg Step2:Plot Ids ? Vgs Stop3:Find Ids at Vg=0 Ps: 测量机台的灵敏度，须注意与曲线的相 关联性！ Ioff Measure method (外插法): Step1:Follow the Ioff Direct meas.method Step2:Plot Max slop of this curve on log(Ids) ? Vgs Step3:Find the Ids at Vg=0 intercept. logId Vg Vd=Vcc logId Vg Vd=Vcc * Device Part: Swing (Subthreshold Slop,St) Define:Swing=(Δlog(Ids)/ ΔVgs)-1=2(kt/q)(1+Cd/Cox) **当Vg逐渐增加,channel accumulationdeplationweak inversionstrong inversion,Swing既是测量weak inversion时 Id与Vg的变化程度!!(exponential) DIBl effect measurement: Step1:Vs=Vb=,Vd= and Sweep Vg Step2:Plot log(Ids) ? Vgs Step3:Plot Max slop of this curve on log(Ids) ? Vgs Step4:Repeat (a) but Vd=Vcc Step5:Repeat (b),? PS:如果发生punch-through (Subsurface-DIBL),High drain St will larger than Low drain. (Swing越大 ,Leakage越大 ) 0 1 VDS=5V VDS=0.1V VG ID * Device Part: Gamma factor Define:γ=(2εqNa1/2/Cox=ΔVt/((2Φf+Vbs1)1/2