二氧化碲一维纳米结构气敏性能分析.pdfVIP

ABSTRACT isa semiconductor hasawideband Te02p-type material，which is sensitivetoredoxandshows in gap．Ithi曲ly gas superiorperformance the of sensitivesensor．Inthisthesis delveinto aspectgas dissertation，we at the of nanowiresroom Te02 properties temperature． gas—sensitive nanowireswere onAu-coatedSi substrate Te02 synthesized by chemical Te asthesourcematerial．The depositionusingpowder vapor nanowiresasthe material． sensorwas Te02 gas preparedbyusing sensing characterizationmeansofXRDandSEMshowsthat Microstructure by are of structure．Thenanowires nanowires Te02 singlephasetetragonal were severaltensofmicrometersin and507、、。200 approximately length nnlindiameter．TherearenoAu onthe ofTe02 particlestip nanowires， thatTe02nanowires tothe revealing growaccording vapor-solid mechanism． nanowireswiththe ResistivesensorsbasedonindividualTe02 nanowire／metalhavebeenfabricatedwire structureofmetal／Te02 by havebeentestedat mask．Ele