在电子倍增过程中产生的阳离子被电场加速进入漂移区轰击光.ppt

Study of THGEM and its applications 中国科学院大学 刘倩 Outline Ion Back Flow (IBF) study for THGEM Introduction Experiment setup IBF of Triple THGEM study Conclusion Applications of THGEM THGEM as GPMT 涂覆CsI的THGEM作为气体光电倍增管的方式分为透过式与反射式两种。 阳离子回流效应对光阴极光电倍增管的老化有着最直接的影响。 电子及阳离子的输运过程 double THGEM to demonstrate Experiment setup IBF analysis for aligned THGEM Geometry design “Flower” configuration Flower Configuration (Double THGEM) result Triple THGEM result Conclusion Applications of THGEM (preliminary result) 1）表面污染监测 原子能研究院（详见庞洪超报告） Conclusion Thanks ！ Backup slices 第三届微结构气体探测器（MPGD）研讨会 2012 带电径迹MIP ions What is Ion Back Flow? 在电子倍增过程中产生的阳离子被电场加速进入漂移区轰击光阴极的过程。 Disadvantage: The decrease of QE after collect a certain amount of charge. 导致量子效率下降 Especially operation in a relatively high rate gain-value. 在更高的计数率或更高的增益下加速老化 Long recovery time after an occasional discharge. 发生放电后需要更长的恢复时间 E E CsI Top1 Bot1 Top2 Bot2 Drift Anode The sum of all current is expected to be 0. (All data we measured are less than 0.2%) The IBF definition. Anode collection efficiency. 每层的电流分别用ID,IT1,IB1等来表示，分别是每层上收集到的电子与阳离子产生的电流之和。 i’T1 iT1 i’B1 iB1 iT2 iB2 eB1 eT2 eB2 1pA resolution Pico Amp meter, totally float. A UV_LED is used as resource. The current of each layer is recorded. Maximum 8 PA meters are used. T1 B1 T2 B2 D A 1.7% 32.3% 0% 0% 0.87% 5.1% 0.78% 59.7% 0% 62.5% 35.8% 1.2kV/cm 1.2kV/cm 0 V/cm 大部分进入漂移区的阳离子来自于最下层THGEM的雪崩放大过程。 将近2/3的电子被下表面的THGEM吸收，增大感应区电场可以减少这个数值。 尽量减少第一层THGEM的增益也可以减少一部分IBF的影响。 Wire wall Misalignment configuration. “THCOBRA” 5% IBF achieved 1% IBF achieved aligned Flower config. * aligned Flower config. * IBF vs. 过渡区电场 阳极收集效率 vs.过渡区电场 D 7 mm 2.5 mm 2.5 mm 1 A 2 1575 V 1575 V 固定感应区电场，改变过渡区电场。 D 1 A 2 3 三层THGEM采用互相错位的结构，同时将第一层的增益适当减小。 93% of the IBF can be reduced by not-aligned configuration while the gain only decreased 17%. The ions will mainly collected (60%~70%) by the layer where those ions are generated. So working under the minimum gain of the first lay