Graphene 石墨烯制备设备.ppt

  Grephene石墨烯 制备设备  姓名：李余强 Mail: 欢迎技术交流：-202  AS-One 石墨烯制备设备 可实现石墨烯制备和RTP 快速退火功能 Up to 1500°C, up to 200°C/s, high vacuum capability, fast cooling option 设备外观图： a． 带电脑桌 b. 不带电脑桌 设备的基本结构： 石墨烯生长腔室结构 腔室结构示意图 石墨烯生长腔室结构 腔室内部实物图 为什么选用该种结构： 冷腔壁结构，优点： 1.Low memory effect and high process reproducibility 低记忆效应和高可重复性 2.Higher cooling rates (enhanced cooling rates with fast cooling option) 高的降温速率 3.Ultra clean and contamination-free environment 高洁净低污染 4.Easy to clean and maintain 便于清理维护 最佳的腔体设计 最佳的腔体设计 1.Laminar gas flow optimized by modelization 气流的在腔室中是层流式的，实现气流的均匀化到达基底表面，可实现石墨烯的均匀生长。 2.The gas injection beneath the quartz window avoids cold spots on the substrate 气流是是从石英玻璃表面到达基地表面，可以实现气流无冷流出现（低温气流） 3. Minimum volume, reduced surface for better high vacuum performance and easy cleaning of the chamber 腔体容积小，可实现高真空，容易清理。 厂家免费提供石墨烯制备工艺一套 SPECIFICATIONS AS-One 100 AS-One 150 Maximum substrate diameter 100 mm (4”) 150 mm (6”) Chamber dimensions 130 mm diameter x 25 mm 200 mm diameter x 25 mm Number of lamps / Maximum power 12 / 30 kW 18 / 34 kW Lamp cooling Fan Fan Temperature range standard Temperature range (HT version) RT to 1250°C RT to 1500°C RT to 1200°C RT to 1300°C Ramp rate 0.1°C to 200°C/s 0.1°C to 150°C/s Temperature control Fast digital PID controller Fast digital PID controller Thermocouple 2 K type (center and edge) 2 K type (center and edge) Low temperature pyrometer range 150°C to 1100°C 150°C to 1100°C High temperature pyrometer range 400°C to 1500°C 400°C to 1500°C Pyrometer ports 2 (center and edge) 2 (center and edge) Gas injection Under quartz window Under quartz window Purge gas line Standard Standard Process gas line with mass flow cont. Up to 5 Up to 5 Vacuum valve and vacuum gauge Standard Standard 设备性能参数汇总表： 设备性能参数汇总表： longsun www.longsun.asia Thank you for your attention!