第二章节cmos制备基本流程资料教材.pptVIP

? Etch Contact Holes (接触孔的蚀刻)or Line Trenches (沟道) ? Fill etched regions (蚀刻区的填充) ? Planarize (平坦化) – CMP process – Also removes material that “overflowed holes or trenches” Damascene Process 大马士革镶嵌工艺 * 大马士革镶嵌工艺包括： ? Strip Photoresist Metal #1 Deposition 第一层金属布线 Photolithography ? Mask #13 pattern alignment and UV exposure ? Rinse away non-pattern PR ? Anisotropic plasma etch * SiO2 Al 光刻胶 ? Sputtered Aluminum ? Al with small amounts of Si and Cu - Cu reduces electromigration 避免电迁移现象带来的断路 - Si 降低接触电阻 Multiple Metal Layers ? Deposits Oxide Layer ? CMP ? Photolithography Mask #14 ? Etch Vias ? Deposit via material ? CMP ? Deposit Next Metal Layer ? Photolithography Mask #15 ? Final passivation layer of Si3N4 is deposited by PECVD and patterned with Mask #16. 防止Na+、K+污染和封装中的机械损伤 ? Final anneal and alloy in forming gas (10% H2 in N2) ? 30min @400-450 °C ? 形成良好的欧姆接触，降低Si/SiO2界面的电荷 * SiO2 W TiN Si3N4或SiO2 Intel μprocessor chip 52MB SRAM chips on a 12” wafer ? Photos of state-of-the-art CMOS chips (from Intel website). ? 90 nm technology. * Summary of Key ideas ? This chapter serves as an introduction to CMOS technology. ? It provides a perspective on how individual technologies like oxidation and ion implantation are actually used. ? There are many variations on CMOS process flows used in industry. ? The process described here is intended to be representative, although it is simplified compared to many current process flows. Perhaps the most important point is that while individual process steps like oxidation and ion implantation are usually studied as isolated technologies, their actual use is complicated by the fact that IC manufacturing consists of many sequential steps, each of which must integrate together to make the whole process flow work in manufacturing. * 作业：MEMS 器件制备 最早的MEMS执行器之一：静电驱动的微马达 * 也可以通入氧气，@1000摄氏度，45min * * * 实际上总共三层，2.7节是第一层。这里先做插头W，再做布线 * 2.1 CMOS制造工艺流程简介 We will describe a modern CMOS