Ion source development at JYFL libra离子源的发展在JYFL 天秤座.pptVIP

December 2007 ESF-Workshop, Athens, Greece ESF-Workshop, Athens, Greece University of Jyv?skyl?, Department of Physics ECR ion source for the highly charged, intensive ion beams H. Koivisto Content 1. Production of highly charged ion beams (by ECRIS) 2. Present projects and challenges 3. (Metal) Ion beam production 4. Beam transport What kind of ion source? Accelerator (linear/cyclotron) gives some boundary condition! - Continues or pulsed beam? - A+ or Aq+(low versus high charge states)? - Intensity requirement? - Variety of elements? Charge breeding? Etc... ECRIS Operation principle (ECRIS) 1) Sufficient magnetic field (including correct structure) 2) Electrons rotating in magnetic field 3) Microwaves ECR: Electron Cyclotron Resonance Scaling laws (magnetic, frequency) 1) Magnetic field: Axial magnetic field Baxial by solenoids Radial magnetic field Bradial by multipole V E N U S 14 GHz : 0.5 T 28 GHz: 1 T Scaling laws 2) Frequency R. Geller proposed: as high microwave frequency as possible is wanted! PROBLEM: Higher magnetic field is required!! ECRIS generations 1st generation: 6.4 GHz MSU RT-ECRIS, TAMU 6.4 GHz, etc 2nd generation: 14 GHz ECRIS AECR, Artemis, Caprice, etc. 3rd generation: 28 GHz VENUS, SECRAL, several under construction: Requires SC-technique! The requirements of next generation heavy ion facilities made the development of 3rd Generation sources (and maybe 4th Generation) ECR ion sources necessary SC-ECRIS, RIKEN, Japan VENUS, 270 eμA U33+ and 270 eμA U34+ SPIRAL 2, GANIL, France SECRAL, Lanzhou, China H. Zhao MS ECRIS GSI, Germany SuSI NSCL,USA 525 eμA U35+ 50-100 eμA U41+ 1mA Ar12+ Optimization of the VENUS source for Ar12+ to demonstrate the ‘tuning’ of the plasma parameters Ar VENUS(28GHz)eμA 12+ 860 14+ 514 16+ 270 17+ 36 18+ 1 Motivation: 1mA Ar12+ for the SPIRAL II Project Comparison of different generations 1st generation:Itot1 mA 2nd generation:Itot= 2-4 mA 3rd generation:Itot= 10