第四章 化学气相沉积.pptVIP

Vacuum and Exhaust system Gas handle system Computer Control Reactor MOCVD Growth System Gas handling system The function of gas handling system is mixing and metering of the gas that will enter the reactor. Timing and composition of the gas entering the reactor will determine the epilayer structure. ? Leak-tight of the gas panel is essential, because the oxygen contamination will degrade the growing films’ properties. Fast switch of valve system is very important for thin film and abrupt interface structure growth, ? Accurate control of flow rate, pressure and temperature?can ensure the stable and repeat. Exhaust system Pump and pressure controller For low pressure growth, we use mechanic pump and pressure controller to control the growth pressure. The pump should be designed to handle large gas load. waste gas treatment system The treatment of exhaust gas is a matter of safety concern. The MOCVD system for GaAs and InP use toxic materials like AsH3 and PH3. The exhaust gases still contain some not reacted AsH3 and PH3, Normally, the toxic gas need to be removed by using chemical scrubber. For GaN system, it is not a problem. Vapor pressure of most common MO compounds Compound P at 298 K (torr) A B Melt point (oC) (Al(CH3)3)2 TMAl 14.2 2780 10.48 15 Al(C2H5)3 TEAl 0.041 3625 10.78 -52.5 Ga(CH3)3 TMGa 238 1825 8.50 -15.8 Ga(C2H5)3 TEGa 4.79 2530 9.19 -82.5 In(CH3)3 TMIn 1.75 2830 9.74 88 In(C2H5)3 TEIn 0.31 2815 8.94 -32 Zn(C2H5)2 DEZn 8.53 2190 8.28 -28 Mg(C5H5)2 Cp2Mg 0.05 3556 10.56 175 Log[p(torr)]=B-A/T Calculate the mole flow rate of MO sources Normally, we use the formula to calculate mol/min. ? F (mol/min)=p MO/p Bubbler*[flow rate (ml/min)]/22400 (mol/ml) ? We need to calculate the mole flow rate before we determine the growth condition. If we want to grow alloys, we can use the mole flow rate to estimate the alloys’ composition. For example, if we grow AlGaN, we can estimate the Al concentration use the following formula if