电泳沉积法制备超疏水ZnO薄膜.docVIP

　第38卷增刊　　　　　　　　　人　工　晶　体　学　报　　　　　　Vol .38S pecial Editi on 　2009年8月　　　　　　　　　JOURNAL OF SY NTHETI C CRYST ALS 　　　　　　　August,2009　　 电泳沉积法制备超疏水Zn O 薄膜 何新华1,2,陈志武1,2,李　茂1,罗　磊1 (1.华南理工大学材料科学与工程学院,广州510640;2.湘潭大学低维材料及其应用技术教育部重点实验室,湘潭411105 摘要:采用电泳沉积法在I T O 导电玻璃基片上制备超疏水Zn O 薄膜,研究了电流强度、沉积时间和缓冲层对薄膜的 晶相、显微结构、透光度和润湿性的影响。利用SE M 和XRD 表征薄膜的表面形貌和晶相组成。结果表明:所沉积 的薄膜主要由Zn O 和Zn (OH 2两相组成,在空气中放置一段时间后全部转变为Zn O 相,电泳沉积膜是由Zn O 纳 米晶片无序排列组成的网状结构。电流强度和缓冲层对薄膜的形貌影响较大,较高的电流强度可获得大孔洞的网 状结构,涂覆Zn O 缓冲层显著改善了薄膜的均匀性。 关键词:Zn O;电泳沉积;疏水性;网状结构 中图分类号:O647　　文献标识码:A 　　文章编号 (2009S120137204 Preparati on of Super 2hydrophobi c ZnO Fil m s by Electrophoreti c Depositi on HE X in 2hua 1,2,CHEN Zh i 2w u 1,2,L I M ao 1,LUO L ei 1 (1.College of Materials Science Engineering,South China University of Technol ogy,Guangzhou 510640,China; 2.Key Laborat ory of Low D i m ensi onalMaterials App licati on Technol ogy of M inistry of Educati on, Xiangtan University,Xiangtan 411105,China Abstract:Super 2hydr ophobic ZnO fil m s were fabricated on conductive I T O glass substrates by electr ophoretic depositi on (EP D .The effect of current density,depositi on ti m e and buffer layer on the crystal phase,m icr ostructure,trans m ittance and wettibility were investigated .Surface mor phol ogy and phase compositi on were characterized by SE M and XRD.The results indieated the as 2deposited fil m s mainly consist of ZnO and Zn (OH 2t w o phase,and Zn O phases were co mp letely for med after exposing t o the air f or a l ong ti m e .Zn O fil m s were reticular structures with random arrange ment of nano crystal p lates .Current density and buffer layer have great effect on the mor phol ogy of ZnO fil m s .Reticular structures with large gap s are obtained at a large current density,and ZnO coated buffer layer would enhance the unifor m ity of as 2deposited Zn O fil m s re markably . Key words:Zn O;electr ophoretic depositi on (EP D ;hydr ophobicity;reticular structure 基金项目:广东省科技计划项目(2007A010500012;华南理工大学国家大学生创新性实验计划(B092