将PE29102用作耗尽型RF GaN HEMT放大器的上电排序器.pdfVIP

Using the PE29102 as a Power-up Sequencer for Depletion-mode RF GaN HEMT Amplifiers Application Note 74 Summary This application note outlines how the PE29102 pulse width modulation (PWM) gallium nitride (GaN) driver can be used as a power-up sequencer for use with depletion-mode GaN radio frequency (RF) transistors. It considers several suitable circuit configurations and determines which one presents the most advantageous use with a GaN power switch. The final circuit is a real implementation with a depletion-mode GaN amplifier device showing the correct power-up and power-down sequence. Introduction The PE29102 is a high frequency field-effect transistor (FET) driver designed for use in PWM-type power switching and Class D audio switching that can also be configured for other uses. This application note outlines the use of the PE29102 as power-up sequencer (PUS). Figure 1 shows the basic configuration of the PE29102 application circuit. Figure 1 • Test Circuit for PE29102 VDD VDD VIN HSB HSGPU Q1 UVLO Level Output Shifter Driver HSGPD PWM Dead PWM IN Time Logic