sentaurus教程：理想pn结的模拟.doc

Technology Computer Aided Design (TCAD) Laboratory Lecture 4, the ideal diode (pn-junction) [Source: Synopsys] Giovanni Betti Beneventi E-mail: gbbeneventi@arces.unibo.it ; giobettibeneventi@ Office: Engineering faculty, ARCES lab. (Ex. 3.2 room), viale del Risorgimento 2, Bologna Phone: +39-051-209-3773 Advanced Research Center on Electronic Systems (ARCES) University of Bologna, Italy G. Betti Beneventi 1 Outline ? Review of basic properties of the diode ? Sentaurus Workbench setup (SWB) ? Implementation of Input files – Sentaurus Structure Editor (SDE) command file – Sentaurus Device (SDevice) ? command file ? parameter file ? Run the simulation ? Post-processing of results G. Betti Beneventi 2 Outline ?Review of basic properties of the diode ? Sentaurus Workbench setup (SWB) ? Implementation of Input files – Sentaurus Structure Editor (SDE) command file – Sentaurus Device (SDevice) ? command file ? parameter file ? Run the simulation ? Post-processing of results G. Betti Beneventi 3 The diode: structure and applications Structure: Simplest possible semiconductor device is made by a so-called pn-junction. It consist of two regions of homogeneous semiconductor, one doped with acceptors (p-type) and the other one doped with donors (n-type). If the transition region between the two semiconductor types is assumed to be thin the junction is said to be abrupt or step Applications: Logic: rarely integrated in the schematic of digital systems but omnipresent, as the Metal-Oxide-Semiconductor Field-Effect- Transistor (MOSFET) contains several reverse-biased diodes. Also, used as a device to protect IC input from ElectroStatic Discharges (ESD). Optoelectronic devices: solar cells, lasers, LED. G. Betti Beneventi 4 The diode: physics at equilibrium ? Because of the concentration gradient experienced by electrons and holes in the structure (p -region rich of holes and depleted of electrons, n-region rich of electrons and depleted of holes), when the junction is formed,