Cu掺杂对ZnO量子点光致发光的影响.docVIP

光电子 激光 第21卷第11期 2010年11月 Journal of Optoelectronics Laser Vo l.21No.11 N ov.2010 Cu掺杂对ZnO量子点光致发光的影响* 徐建萍1,2**,石少波3,张晓松1,李 岚1 (1.天津理工大学材料物理研究所显示材料与光电器件省部共建教育部重点实验室天津市光电显示材料与 器件重点实验室,天津300384; 2.南京大学固体微结构物理国家重点实验室,南京210093; 3.天津职业技术师 范大学理学院,天津300222 摘要:通过溶液法合成了Cu掺杂ZnO量子点。X射线衍射(XRD和高分辨电子透射电镜(HRTEM图像显示 Cu掺杂ZnO量子点具有六角纤锌矿结构,晶粒大小为4~5nm。Cu掺杂抑制了ZnO量子点颗粒长大。室温 光致发光(PL谱观察到紫外带边和可见区两个发射峰。随着Cu掺杂浓度的增大,紫外荧光峰位发生缓慢红 移,由366nm移到370nm;可见区发射峰位发生蓝移,由525nm移到495nm;同时,两个发射峰强度降低。光 谱结果表明:Cu的掺入,一方面抑制表面与O空位有关的缺陷,在495nm出现了与Cu1+有关的发射峰;另一方 面,Cu离子掺入ZnO量子点引入一些非辐射中心,降低了自由激子发射。 关键词:Cu掺杂ZnO量子点;光致发光(PL谱 中图分类号:O484 文献标识码:A 文章编号:1005-0086(201011-1593-04 Influenc e of C u doping on photolum inesc enc e properties of ZnO quantum dots XU Jian-ping1,2**,SHI Shao-bo3,ZH ANG Xiao-song1,LI Lan1 (1.Institute of M aterial Physics,Key Laborator y of Display M aterials and Photoelectr i c Devices(T ianjin U niversity of Technology,M inistry of Education,T ianjin Key Laborator y for Photoelectric M aterials and Devices,T i anjin U- niversity of Technology,T ianjin300384,China; 2.Laborator y of Solid State M icrostructures,Nanjing U niversity, Nanjing210093,China; 3.School of Sci ence,T ianjin U niversity of Technology and Education,T ianjin300222,Ch-i na Ab st ract:Cu-doped ZnO quantum dots(QDsare synthe sized successfully via a solut ion-phase method. X-ray diffraction patterns(XRDand high-resolution transmission electron mic roscopy(HRT EMima- ges reveal that Cu-doped ZnO QDs are with hexagonal wurtzite ZnO structure in ave rage particle size of 4-5nm.Room t e mperature photoluminesc ence(PLspec tra show an ultraviolet(UVband edge emis- sion and a visible emission band.With Cu doping concentration incre asing from0t o1%,the U V emis- sion peak position slowly shifts from366nm to370nm,while the visible emission pe ak position shifts from525nm to495nm.Furthe rmore,the PL spectra become weak wit h the inc reasing of Cu doping conce ntration.T he result s suggest that the Cu doping suppresses the emission related to surf