图形刻蚀技术.docx

第7章：图形刻蚀技术 (Chapter 11)  ?问题： -常见的刻蚀对象：SiO2 Si3N4 Poly-Si磷 硅玻璃、铝或铝合金、衬底材料等 -即：金属刻蚀、介质刻蚀、硅（半导体）刻 蚀 Photoresist Photoresist mask mask Film Protected film Photoresist mask to be etched Film to be etched (b) Substrate after etch (a) Photoresist-patterned substrate Wet etching Wet etching Resist Layer to be etched SubsUate Reactive Ion plasma sictiing (RlE) I high pressure \^low pressure 图4-21不同腐蚀工艺的结果：〈左面｝湿法腐蚀（髙各向同性〉、 C中间）干法刻曲方向性｝和佑恥干法刻述（爲方向性） T^perfEteh SdeMallHxtile WtEtdi Isctn ic (c^endh^cnequipTErt pEranrters) Aisohrpic(dq^endungcnequipTErt ponjnrlers) SliccnTtendi Etch Bias、Undercut、S