数字逻辑设计及应用：chap9 memory.ppt

ROM and RAM Mask ROM PROM EPROM SRAM DRAM Application of memory The Expanding of memory Chapter 9 Memory Memory Each memory unit is controlled by word line! address Read only memory (ROM) Mask ROM: use a diode or transistor as memory connection. 1 0 P-ROM: Programmable , add a fuse to the device. Read only memory (ROM) 1 0 出厂时所有存储单元为1，用户可写入0 只能写入一次：令字线为高电平，位线上施加负高压脉冲 EPROM: Erasable PROM ,use floating-gate technology. Include EEPROM and FLASH . Read only memory (ROM) 高电平 极高电平 Random access memory (RAM) Use memory device to store data bit, and use word line to control its input/output from bit line . Static RAM (SRAM) The memory device is a latch ,the data is stable, and the access time is short, but the circuit is complex and expensive ! Dynamic RAM (DRAM) The memory device is capacitor Very simple, high density; The output signal is very weak , a sense amplifier is needed; The data stored need to refresh periodically ! Application of Memory Data bits are stored in a structured way Once a word line is selected, all the bits in this line can be input or output through the bit lines ! Example: When a2a1a0= 000, y4y3y2y1= 1000; When a2a1a0= 101, y4y3y2y1= 0110; Application of Memory A truth table is stored in the memory array ! Each bit line is a function output ! Application of Memory Example: Application of Memory Memory IC: ROM If there are N address input, 2N word can be stored; CS and OE port can be used for expand the memory. Memory IC: RAM Use WE port to control data input/output ! 当使用一片ROM/RAM器件不能满足存储量的需要时，可以将若干片ROM/RAM组合到一起，接成一个容量更大的ROM/RAM。 位扩展方式: 输入全部并接，输出分别接出 如果每一片ROM/RAM中的字数已够用而位数不够用时，应采用位扩展的连接方式，将多片ROM/RAM组合成位数更多的存储器 存储器的扩展 例1 用1024×1位RAM接成1024×8位RAM 字扩展方式: 地址输入低位并接，输出全部并接 , 地址输入高位通过译码控制片选 如果每一片ROM/RAM中的位数已够用而字数不够用时，应采用字扩展方式（也称地址扩展方式） 例2 用四片256×8位RAM接成一个1024×8位RAM 256（=28），1024（=210），每一片RAM只有八位地址输入端，而1024为10位地址输入端，故需增加两位地址码A9、A8，作为片选信号。 由于每一片RAM的数据端I/O1～I/O8都有三态缓冲器，而它们又不会同时有效，故可将它们