电极与铁电薄膜的制备及性能.docxVIP

物为底电极的工艺下制得的BNT铁电薄膜综合性能较好。此条件下剩余极化值 物为底电极的工艺下制得的BNT铁电薄膜综合性能较好。此条件下剩余极化值 n最大约为30．059C／cm2，矫顽场＆约为103kV／cm。在经过大于108次翻转后， 剩余极化值n才下降9％左右。低电压时，BNT／LNO界面是欧姆接触，界面存 在的是肖特基势垒。当在电压高情况下，主要为空间限制电流，这主要是用LNO 作为电极引起的。BNT／LNO／Si薄膜的剩余极化值比BNT／Pt／Si薄膜的要大，抗 疲劳性能要比以Pt作为底电极的铁电薄膜的要好，但漏电流密度也比其要大。 这主要是LNO电极的引入起到缓冲层的作用，减少了BNT薄膜中氧空位的存在， 但也增加了缺陷。 (3)研究了不同Ni含量对BNT铁电薄膜晶体结构、表面形貌、电滞回线一 疲劳特性、漏电流的影响。从实验结果可以看出，当Ni含量x=0．2时铁电薄膜 的综合性能最优。剩余极化值由未掺杂的39．19C／cm2变化到Ni掺杂量x=0．2时 的64．2[．tC／cm2，漏电流密度由x=0时的10。7数量级下降到x=0．2时的10-9数量级， 抗疲劳性能随Ni含量的变化也产生变化。这说明适量的Ni掺杂，对BNT铁电 薄膜电性能的提高有一定的作用，从而使BNT铁电薄膜符合应用于高性能铁电 存储器的需要。 关键词：BNT铁电薄膜LNO导电薄膜S01．Gel工艺铁电性能 Ⅱ 万方数据 TH匝PREPA TH匝PREPA R ATION AND PROPERTIES RESEARCH OF LaNi03 ELECTRODE WITH Bi3．15 Ndo．85 Ti3012／LaNi03／Si FERROELECTRIC THIN FILM AB STRACT Bi3．1sNdo．8sTisOt2(BNT)is a bismuth layered perovskite structure of ferroelectric materials and iS dedicated to researchers because of its lead．free．have higher residual polarization value，high fatigue resistance，high Curie temperature．BNT ferroelectric thin films widely used in the manufacture of non—volatile ferroelectric random memory,SO the stand or fall of BNT ferroelectric thin film performance directly affects the strengths and weaknesses of the ferroelectric memory performance． LaNi03(LN01 conductive oxide iS constraint perovskite structure，and BNT thin film iS perovskite structure．They very similar，SO the BNT ferroelectric thin film match growth with LNO thin film．LNO thin film has well electric conductivity．and LNO conductive oxide bottom electrode has a broader space．BNT ferroelectric thin film of the heat treatment process．the choice of the bottom electrode on the iron electric properties，iS influence the fatigue resistance and leakage current performance very big．The BNT ferroelectric thin film and LNO conductive oxide electrodes are the object of study in this article，and the heat treatment process，doping of Au／BNT／UNO／Si f l oo)capacitor structure are researched，and discussed the influence of crystal，surface