晶片的来料检验.pptxVIP

;Chipouts on edge of die shall not penetrate into any active circuit area. Note: Active circuit area is defined as from outside edge of the bond pads inward, except where there is an active line in the design located beyond the outside edge of the bond pads ;Cracks shall not be longer than 1.0 mil inside active circuit area that points toward operating metal or functional circuit element. ;Cracks that do not point toward operating metal or functional circuit elements shall not exceed 5.0 mils in length. (Silicon GaAs Die) ;Discoloration in glassivation outer layer is harmless and shall be acceptable, providing it is not obscuring any other damage. There shall be no corrosion in metallization, or any other layers. Metallization having any localized discoloration shall be closely examined and shall be rejected, unless it is demonstrated to be a harmless film, glassivation interface, or other non-obscuring effects.? ;There shall be no Conductive (opaque) Foreign Material on the top of unglassivated die that is large enough to bridge two or more adjacent? metallization areas, and that cannot be removed ;Contamination or Foreign material;There shall be no attached or embedded material in die that bridges two active circuit elements. GaAs: There shall be no attached or embedded material in die that reduces spacing of two active circuit elements by greater than 50 percent.Silicon: There shall be no attached or embedded material in die that does not provide a visible line of separation between two active circuit elements. ;There shall be no liquid drops, chemical stains, ink or photoresist on top of unglassivated areas that bridges two active circuit elements. (Liquid drops, chemical stains, ink or photoresist on top of glassivated portion of the die are acceptable).;GaAs (requirement only)There shall be no cracking or chipping within active circuit area. There shall be no chipouts that extend beyond 50 percent of the substrate thickness or cracks in side walls greater