AKZE4N60广东奥科半导体.pdf免费

AKZE4N60 N-Channel 600V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 600 • Reduced Gate Drive Requirement RDS(on) () VGS = 10 V 2.2 • Enhanced 30 V, VGS Rating Qg (Max.) (nC) 39 • Reduced Ciss, Coss, Crss Qgs (nC) 10 • Extremely High Frequency Operation Qgd (nC) 19 • Repetitive Avalanche Rated Configuration Single • Compliant to RoHS Directive 2002/95/EC D TO-252 G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30