场效应MOS管AK0103参数3A100V封装SOT-23.pdf免费

AK0103 AK N-Channel Enhancement Mode Power MOSFET Description The AK0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V = 100V,I = 3A Schematic diagram DS D RDS(ON) 160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) 170mΩ @ VGS=4.5V (Typ:140mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 0103 AK0103 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3 A Drain Current-Pulsed (Note 1) IDM 20 A Maximum Power Dissipation PD 1.5 W Operating Junction