场效应MOS管AK3008Y参数8A30V封装SOT-23-3L.pdf免费

AK3008Y AK N-Channel Enhancement Mode Power MOSFET Description The AK3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is suitable for use as a Battery protection or in other switching application. Schematic diagram General Feature ● V =30V,I =8A DS D RDS(ON) 17mΩ @ VGS=10V RDS(ON) 22mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery switch ●DC/DC converter Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3008Y AK3008Y SOT23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 8 A Drain Current-Pulsed (Note 1) IDM 30 A Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ ,TSTG -55 To 150 ℃ Thermal Characteristic