AKZE2N65广东奥科半导体.pdf免费

AKZE2N65 65Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Q Results in Simple Drive VDS (V) 650 g Requirement RDS(on) (Ω) VGS = 10 V 3.8 • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 15 Ruggedness Qgs (nC) 3 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 6 and Current Configuration Single • Compliant to RoHS directive 2002/95/EC D TO-252 G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage