场效应MOS管AK2301B参数-2.6A-20V封装SOT-23.pdf免费

AK2301B AK P-Channel Enhancement Mode Power MOSFET Description The AK2301B uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a G load switch or in PWM applications. S General Features Schematic diagram ● V = -20V,I = -2.6A DS D RDS(ON) 160mΩ @ VGS=-2.5V RDS(ON) 120mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2301B AK2301B SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -2.6 A Drain Current -Pulsed (Note 1) IDM -13 A Maximum Power Dissipation