场效应MOS管AK1579A参数79A150V封装TO-220.pdf免费

AK1579A AK N-Channel Enhancement Mode Power MOSFET Description The AK1579A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =150V,I =79A DS D RDS(ON) 16mΩ @ VGS=10V (Typ:13mΩ) ● High density cell design for ultra low Rdson Schematic diagram ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK1579A AK1579A TO-220-3L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 79 A Drain Current-Continuous(T =100℃) I (100℃) 56 A