AKZM4N65广东奥科半导体.pdf免费

AKZM4N65 Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Q Results in Simple Drive VDS (V) 650 g Requirement RDS(on) (Ω) VGS = 10 V 2.1 • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 19 and Current Configuration Single • Compliant to RoHS directive 2002/95/EC TO-220AB D G S G D S N-Channel MOSFET T i w op V e ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage