AKZE16N05广东奥科半导体.pdf免费

AKZE16N05 N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY FEATURES • TrenchFET® Power MOSFET VDS (V) rDS(on) (Ω) ID (A)a • 175 °C Junction Temperature 0.026 at VGS = 10 V 41 60 0.030 at VGS = 4.5 V 30 D TO-252 G Drain Connected to Tab S G D S op V e N-Channel MOSFET T i w ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V TC = 25 °C 41 Continuous Drain Current (TJ = 175 °C)b ID TC = 100 °C 28 Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction