TSR20V120CT-TSR20V120CTF
Trench MOS Barrier Schottky Rectifier
Reverse Voltage - 120 V
Forward Current - 20 A
FEATURES
Advanced trench technology
Low forward voltage drop
Low power losses
High efficiency operation
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: TO-220AB/ITO220AB
Terminals: Solderable per MIL-STD-750, Method 2026
Maximum Ratings (Per Leg) at Ta=25°C unless otherwise specified
Parameter Symbols Value Units
Maximum Repetitive Peak Reverse Voltage VRRM 120 V
Maximum RMS voltage VRMS 120 V
Maximum DC Blocking Voltage VDC 120 V
Per device 20 A
Maximum Average Forward Rectified Current IF(AV)
Per diode 10 A
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
IFSM 220 A
superimposed on rated load per diode
Operating Temperature Range TJ -65 ~ +150 °C
Storage Temperature Range TSTG -65 ~ +150 °C
您可能关注的文档
- 场效应MOS管AK85H21C参数210A85V封装TO-220.pdf
- 场效应MOS管AK85H21参数210A85V封装TO-220.pdf
- 场效应MOS管AK0224AF参数24A200V封装TO-220F.pdf
- 场效应MOS管AK0240F参数40A200V封装TO-220F.pdf
- 广东奥科半导体GBU601G-GBU602G-GBU604G-GBU606G-GBU608G-GBU610G-GBU.pdf
- 广东奥科半导体GBU601-GBU602-GBU604-GBU606-GBU608-GBU610-GBU.pdf
- 广东奥科半导体GBU401G-GBU402G-GBU404G-GBU406G-GBU408G-GBU410G-GBU.pdf
- 广东奥科半导体GBU401-GBU402-GBU404-GBU406-GBU408-GBU410-GBU.pdf
- 场效应MOS管AK30P55F参数-30A-30V封装TO-220F.pdf
- 广东奥科半导体GBU2501-GBU2502-GBU2504-GBU2506-GBU2508-GBU2510-GBU.pdf
原创力文档

文档评论(0)