1N5817WS-1N5818WS-1N5819WS-SOD-323广东奥科半导体.pdf免费

1N5817WS-1N5818WS-1N5819WS-SOD-323广东奥科半导体.pdf

1N5817WS THRU 1N5819WS SOD-323 SCHOTTKY BARRIER DIODE Pinning 1.Cathode 2.Anode FEATURES  Low Forward Voltage Drop  Guard Ring Construction for Transient Protection  Negligible Reverse Recovery Time  Low Capacitance  Lead free in comply with EU RoHS 2011/65/EU directives Marking Code MECHANICAL DATA 1N5819WS S4  Case: SOD-323 1N5818WS S5 Terminals: Solderable per MIL-STD-750, Method 2026 1N5817WS S6 Approx. Weight: 5.48mg / 0.000 19oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Parameter Symbols 1N5819WS 1N5818WS 1N5817WS Units Peak Repetitive Reverse Voltage VRRM 40 30 20 V RMS reverse voltage VRMS 28 21 14 V Working Peak Reverse Voltage VDC 40 30 20 V Peak Forward Surge Current, 8.3ms Single Half Sine- wave Superimposed On Rated Load(JEDEC IFSM 13 A method) IF=20mA 0.37 Maximum Instantaneous Forward

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