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- 约小于1千字
- 约 24页
- 2021-10-10 发布于广东
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Wide BandgapSemiconductor-Based Lasers;Part 1:GaN blue laser diodes;彩色激光显示
打印和扫描:快速、高分辨率
存储:CD(780 nm)——AlGaAs基激光器
VCD(635 nm或650 nm)——AlGaInP激光器
DVD(410nm)—— InGaN 激光器;提高物镜的数值孔径NA值
容量与光源波长的2次方成反比
光学元部件及光盘片材料的光学透过率等限制;1-3 Difficulties and Breakthroughs;1-4 Growth;F-P腔结构InGaN基激光器
电注入的三级Bragg光栅紫光DFB激光器;Part 2:GaN-Based VCSEL and GaN-/ZnO-Based;2-1 Introduction;2-2 GaN-BASED VCSEL;2-2-1 Optically Pumped GaN-Based VCSEL(1);2-2-1 Optically Pumped GaN-Based VCSEL(2);2-2-1 Optically Pumped GaN-Based VCSEL(3);2-2-1 Optically Pumped GaN-Based VCSEL(4);2-2-2 Electrically Pumped GaN-Based VCSEL(1);2-2-2 Electrically Pumped GaN-Based VCSEL(2);2-2-2 Electrically Pumped GaN-Based VCSEL(3);2-3 Wide Bandgap Semiconductor Polariton Devices;2-3-1 GaN-Based Microcavities-Polariton Lasers;2-3-2 ZnO-Based Microcavities(1);2-3-2 ZnO-Based Microcavities(2);3. CONCLUSION;References;Thanks!
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