半导体物理与器件第四版课后习题答案7.docxVIP

— PAGE \* Arabic 1 — 半导体物理与器件第四版课后习题答案7 Chapter 7  7.1  (a)  (i)()(  )(  )  (  )  ???  ?  ???????=2  101515105.1102102ln 0259.0bi V  611.0=V  (ii)()(  )(  )  (  )  ???  ?  ???????=2  101615105.1102102ln 0259.0bi V  671.0=V  (iii)()(  )(  )  (  )  ???  ?  ???????=2  101715105.1102102ln 0259.0bi V  731.0=V (b)  (i)()(  )(  )  (  )  ???  ?  ???????=2  101517105.1102102ln 0259.0bi V  731.0=V  (ii)()(  )(  )  (  )  ???  ?  ???????=2  101617105.1102102ln 0259.0bi V  790.0=V  (iii)()(  )(  )  (  )  ???  ?  ???????=2  101717105.1102102ln 0259.0bi V  850.0=V  _______________________________________ 7.2  Si: 10105.1?=i n cm 3-  Ge: 13104.2?=i n cm 3- GaAs: 6108.1?=i n cm 3- ???  ?  ?  ?=2  ln i d  a t bi n N N V V and 0259.0=t V V  (a)1410=d N cm 3-, 1710=a N cm 3- Then Si: 635.0=bi V V Ge: 253.0=bi V V GaAs: 10.1=bi V V (b)16105?=d N cm 3-, 16105?=a N cm 3-  Si: 778.0=bi V V Ge: 396.0=bi V V GaAs: 25.1=bi V V (c)1710=d N cm 3-, 1710=a N cm 3- Si: 814.0=bi V V  Ge: 432.0=bi V V GaAs: 28.1=bi V V  _______________________________________ 7.3  (a) Silicon (300=T K)  For 1410==d a N N cm 3-; 4561.0=bi V V  1510= ; 5754.0=V  1610= ; 6946.0=V  1710= ; 8139.0=V (b) GaAs (300=T K)  For 1410==d a N N cm 3-;  9237.0=bi V V  1510= ; 043.1=V 1610= ; 162.1=V 1710= ; 282.1=V (c) Silicon (400 K), 034533.0=kT 121038.2?=i n cm 3-  For 1410==d a N N cm 3-;  2582.0=bi V V  1510= ; 4172.0=V  1610= ; 5762.0=V  1710= ; 7353.0=V GaAs(400 K), 91029.3?=i n cm 3-  For 1410==d a N N cm 3-;  7129.0=bi V V  1510= ; 8719.0=V 1610= ; 031.1=V 1710= ; 190.1=V  _______________________________________ 7.4  (a) n-side or  3294.0=-Fi F E E