1424Optoelectronics知识课件知识讲稿.pptVIP

7. The avalanche photodetector (APD 雪崩光电极管) ;I. APD structures ;Reach through APD (RAPD, 拉通型APD): ; ? layer is undoped or lightly P-doped, ? layer is absorption region. ; : critical electric field intensity ; junction with , high impact ionization coefficient(离化率) avalanche process ;Electron injection;Illumination photon absorbed hot carriers at reverse electric field ,multiply carriers generated ;photogenerated carrier 1;(1) impact ionization coefficients (离化率) ;(1) impact ionization coefficients (离化率) ; The election and hole curr