RS Components 其他智能设备 晶体管 GT60PR21,STA1F(S 使用说明.pdfVIP

GT60PR21 Discrete IGBTs Silicon N-Channel IGBT GT60PR21 GT60PR21 GT60PR21 GT60PR21 1. Applications 1. Applications 1. 1. ApplicationsApplications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. 2. FeaturesFeatures (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT t = 0.16 µs (typ.) (I = 60 A) f C FWD t = 0.60 µs (typ.) (I = 15 A) rr F (5) Low saturation voltage: VCE(sat) = 2.0 V (typ.) (IC = 60 A) (6) High junction temperature: T = 175  (max) j 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-3P(N) Start of commercial production 2012-03 1 2014-01-07