ZnO纳米线阵列PVK二极管光电特性研究.docVIP

ZnO纳米线阵列PVK二极管光电特性研究 ------------------------------------------------------------------------------------------------ ZnO纳米线阵列PVK二极管光电特性研究 毕业设计 题 目 学生姓名 所在院(系 专业班级 指导教师 完成地点 2016年5月 ZnO纳米线阵列/PVK二极管光电特性研究 何龙旺 (陕西理工学院物理与电信工程学院电子信息科学与技术专业电信1203班，陕西汉中 723000) 指导教师:袁兆林 [摘要] 为了发展低成本、大面积和高性能光电二极管，采用水热方法，低温下，在氧化铟锡(ITO)涂覆 的玻璃基底上生长出良好取向排列的氧化锌(ZnO)纳米线阵列，然后在生长的氧化锌(ZnO)纳米线阵列上 旋涂p型聚乙烯咔唑(PVK)层，形成结构为ITO/ZnO/PVK/Ag的光电二极管。采用场发射扫描电子显微镜 (FESEM)、X射线衍射仪(XRD)分别表征制备的ZnO纳米线阵列的形貌、晶相结构。测试结果表明:ZnO纳米线形成致密良好取向排列阵列，纳米线的直径为20,30nm，长度在200,300nm，具有六方纤锌矿结 构。进一步，系统研究了此光电二极管在暗态和太阳光模拟器的—————————————————————————————————————— ------------------------------------------------------------------------------------------------ 光照下的电流-电压(I-V)特性。结果显示:该器件在暗态和光照下 都表现出良好的二极管特性，在暗态和光照下的整流率分别为352和 160。 [关键词] ZnO纳米线阵列;水热法;光电二极管;整流率 Photoelectric characteristics of the ZnO nanowire array/PVK diode He Long-wang (Grade12,Class3,Major Electronic Information Science and Technology,Physics Dept.,Shaanxi University of Technology,Hanzhong 723000,Shaanxi) Tutor:Yuan Zhao-lin Abstract :In order to develop low-cost ,large-area and high-quality photodiodes ,in this paper, well-aligned ZnO nanowire arrays were grown on indium tin oxide (ITO)-coated glass substrates by hydrothermal technique at low temperature. A photodiode with a structure of ITO/ZnO/PVK/Ag was fabricated using ZnO and PVK . The morphologies and crystalline structure of as-grown ZnO nanowire arrays were investigated by field-emission scanning-electron microscopy (FESEM) and X-ray diffraction (XRD), respectively. The results of these measurements showed the ZnO nanowire arrays contained densely packed, aligned nanowires with diameters from 20 to 30 nm, lengths from 200 to 300 nm and a wurtzite structure. Moreover, the current-voltage (I-V) —————————————————————————————————————— ------------------------------------------------------------------------------------------------ characteristics of the photodiode in dark and under illumination with a