SILICON STORAGE TECHNOLOGY 16 Mbit (x8) Multi-Purpose Flash Plus SST39VF1681 SST39VF1682 Manual说明书用户手册.PDF

SILICON STORAGE TECHNOLOGY 16 Mbit (x8) Multi-Purpose Flash Plus SST39VF1681 SST39VF1682 Manual说明书用户手册.PDF

  1. 1、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。。
  2. 2、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载
  3. 3、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
查看更多
16 Mbit (x8) Multi-Purpose Flash Plus SST39VF1681 / SST39VF1682 SST39VF1681 / 16822.7V 16Mb (x8) MPF+ memories Preliminary Specifications FEATURES: • Organized as 2M x8 • Security-ID Feature • Single Voltage Read and Write Operations – SST: 128 bits; User: 128 bits – 2.7-3.6V • Fast Read Access Time: • Superior Reliability – 70 ns – Endurance: 100,000 Cycles (Typical) – 90 ns – Greater than 100 years Data Retention • Latched Address and Data • Low Power Consumption (typical values at 5 MHz) • Fast Erase and Byte-Program: – Active Current: 9 mA (typical) – Sector-Erase Time: 18 ms (typical) – Standby Current: 3 µA (typical) – Block-Erase Time: 18 ms (typical) – Auto Low Power Mode: 3 µA (typical) – Chip-Erase Time: 40 ms (typical) • Hardware Block-Protection/WP# Input Pin – Byte-Program Time: 7 µs (typical) – Top Block-Protection (top 64 KByte) • Automatic Write Timing for SST39VF1682 – Internal VPP Generation – Bottom Block-Protection (bottom 64 KByte) • End-of-Write Detection for SST39VF1681 – Toggle Bits • Sector-Erase Capability – Data# Polling – Uniform 4 KByte sectors • CMOS I/O Compatibil

文档评论(0)

D26499578 + 关注
实名认证
内容提供者

该用户很懒,什么也没介绍

版权声明书
用户编号:8010054012000036

1亿VIP精品文档

相关文档