【材料分析方法】第4章-菊池衍射与EBSD的分析.pptxVIP

1 什么是菊池花样？;FIGURE 19.1. An ideal DP containing both well-defined spots and clearly visible pairs of bright (excess) and dark (deficient) Kikuchi lines;FIGURE 19.3. Three two-beam DPs from pure Al, obtained under different tilting conditions. As shown schematically below each figure, in (A) the hkl spot is at the exact Bragg condition (the excess Kikuchi line goes through hkl). In (B) the 2h2k2l and in (C) the 3h3k3l spots, respectively, are strongly excited. Note that although we refer to these as ‘two-beam’ DPs, many other diffraction spots are visible.;2 出现菊池线的条件;3 菊池线的产生;FIGURE 19.2. (A) Schematic representation of all electron scattering localized at a single point in the specimen. In (B) some of the scattered electrons are diffracted because they travel at the Bragg angle yB to certain hkl planes. The diffracted electrons form Kossel cones centered at P on the diffracting planes. The lines closest to the incident beam direction are dark (deficient) and the lines farthest away are bright (excess). In (C) the cones intercept the Ewald sphere, creating parabolas which approximate to straight lines in the DPs because yB is small.;FIGURE 19.2. (A) Schematic representation of all electron scattering localized at a single point in the specimen. In (B) some of the scattered electrons are diffracted because they travel at the Bragg angle yB to certain hkl planes. The diffracted electrons form Kossel cones centered at P on the diffracting planes. The lines closest to the incident beam direction are dark (deficient) and the lines farthest away are bright (excess). In (C) the cones intercept the Ewald sphere, creating parabolas which approximate to straight lines in the DPs because yB is small.;菊池线对的产生及其几何特征;P方向背景强度为：I(β2) + IP’- IQ’ Q方向背景强度为：I(β1) + IQ’- IP’ ∵ β1β2，I(β1)〉I(β2) ∴ IP’ IQ’ 则P方向的净变化 IP’- IQ’ 0 Q方向的净变化 IQ’- IP’ 0 即P方向净增加：IP’- IQ’ Q方向净减少：IP’- IQ’;4 菊池线对的几何特征;对称入射，即B [uvw]时，线对对称分布于中心斑点两侧； 双光束条件，即s=0，亮线通过(hkl)斑点，暗线通过中心斑点； S+g0时，菊池线对分布于中心斑点的同一侧； S+g0时，菊池线对分布于中心斑点的