异质结的能带图剖析.pptxVIP

会计学;;3.3.1 界面态密度较小;采用的样品;The capacitance of a p -n heterojunction, excluding interface states and deep-level traps, has been given by Anderson;The effect of interface states on the single-heterojunction capacitance was investigated by Donnelly and Milnes who obtained the following expression:; the doping level in the active layer is 2x1017cm-3 16 h degradation, the slope of line 2 remains essentially the same as line 1. VD ?1. 58 V. QIS= 3x1012 cm-2 . 62 h degradation(line 3), the slope is reduced but the diffusion voltage remains unchanged. This indicates an increase of the ionized charge density greater than 1017 cm3 in the active layer. The changes of the C-V characteristics show that the charge centers are formed first at the interface and then spread into the active layer. ;存在类施主界面态时的异质结能带;电流传输;4.1突变异质结的伏安特性;4.1.1 低尖峰势垒用扩散模型.;同质P-n结时的情况;当外加电压V施加在半导体材料上时，其伏安特性即电压同电流的关系为： I=A?[exp(eV/kT)-1] 式中A为一常数，e为电子电荷，k为玻尔兹曼常数，T为温度。可以看出电流的大小是随着外加电电压的增大而呈指数形式上升的。;;注入到P型区的少子运动的连续性方程为:;求A：;从p型区价带底到n型区价带底的势垒高度为 qVD1+qVD2+DEv=qVD+DEv;;4.1.2热电子发射模型（高势垒尖峰情况）;由p区注入到n区的电子要越过势垒高度;正反两个方向的电压都按指数增加;b是二极管的理想因子;4.1.3 隧穿机制;4.2 异质结的注入比;我们将注入比r定义为：在p-N结上加有正向电压时，由N区向p区注入的电子流JN→p同p区向N区注入的空穴流Jp→N的比值，即r=JN→p/Jp→N。理论分析得出： r=D?exp(?Eg/kT) 式中D为常数。 同质结：?Eg=0，r=D。 异质结：r 随着?Eg呈指数上升。 例如，在p-GaAs/N-Al0.3Ga0.7As异质结中，它们的?Eg=0.33eV，结果注入比r高达7.4×105，因而注入比提高了七十四万倍。在同样的正向电压下，可以获得更高的注入电子浓度。;;Principle of Operation;Principle of Operation;Principle of Operation;第29页/共34页;4.3 超注入现象;;Fundamental physical phenomena in classical heterostructures;第33页/共34页