BTS3011TE 英飞凌芯片 INFINEON 中文版规格书手册.pdfVIP

HITFETTM - BTS3011TE Smart Low-Si de Power Switch 1 Overview Features • Single channel device • Digital Feedback • Current limitation trigger concept • 3.3 and 5 V compatible logic inputs • Electrostatic discharge protection (ESD) • Green Product (RoHS compliant) • AEC Qualified Applications • Suitable for resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits • Most suitable for inductive loads as well as loads with inrush currents Description The BTS3011TE is a 11 mΩ single channel Smart Low-Side Powe r Switch with in a PG-TO252-5 package providing embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3011TE is automotive qualified and is optimized for 12 V automotive and industrial applications. Type Package Marking BTS3011TE PG-TO252-5 S3011TE Table 1 Product Summary Operating voltage range VOUT 3 .. 28 V Maximum battery voltage VBAT(LD) 40 V Operating supply voltage range VDD 3.0 .. 5.5 V Maximum input voltage VIN 5.5 V Maximum On-State resistance at T = 150 °C, V = 5 V, V = 5 V R 22 mΩ j DD IN DS(ON)_150 Nominal load current I 10 A