BTS3125TF 英飞凌芯片 INFINEON 中文版规格书手册.pdfVIP

HITFET - BTS3125TF Smart Low-Si de Power Switch 1 Overview Basic Features • Single channel device • Very low output leakage current in OFF state • Electrostatic discharge protection (ESD) • Embedded protection functions (see below) • Green Product (RoHS compliant) • AEC Qualified Applications • Suitable for resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits Description The BTS3125TF is a 125 mΩ single channel Smart Low-Side Powe r Switch within a PG-TO252-3 package providing embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3125TF is automotive qualified and is optimized for 12 V automotive applications. Type Package Marking BTS3125TF PG-TO252-3 S3125TF Table 1 Product Summary Operating voltage range VOUT 0 .. 31 V Maximum load voltage VBAT(LD) 40 V Maximum input voltage VIN 5.5 V Maximum On-State resistance at T = 150°C, V = 5 V R 250 mΩ J IN DS(ON) Nominal load current I 2 A L(NOM) Minimum current limitation I 7 A L(LIM) Maximum OFF state