铝栅硅栅器件的版图.ppt

Source/Drain: Photomask (dark field) mask 1 Clear Glass Chromium Cross Section Step 2b: (patterning) Expose photoresist to create temporary pattern for source/drain regions. N Doped Silicon Thick Field Oxide Photoresist Ultraviolet Light Photomask Step 2c: (patterning) Develop photoresist, completing temporary pattern for source/drain regions. N Doped Silicon Thick Field Oxide Photoresist Step 2d: (patterning) Wet etch permanent openings for source/drain into field oxide. N Doped Silicon Thick Field Oxide Photoresist Step 2e: (patterning) Remove photoresist. Permanent pattern remains in the silicon dioxide. N Doped Silicon Thick Field Oxide Source/Drain Windows: Microscope View mask 1 Bare Silicon Thick Field Oxide Cross Section *Step 3a: (doping) Apply p-type spin-on dopant film. Boron penetrates into the silicon through the holes in the field oxide to begin formation of the source and drain regions. N Doped Silicon P+ Drain P+ Source Thick Field Oxide Boron-Doped Spin-On Oxide Step 3b: (heat treatment) Drive dopants deeper into silicon using high temperatures (~1000℃), completing formation of the source and drain regions. N Doped Silicon P+ Drain P+ Source Thick Field Oxide Boron-Doped Spin-On Oxide P+ Drain P+ Source Channel Length - Leff Step 4a: (layering) Wet etch to remove SOD (spin-on dopant) and field oxide layers. N Doped Silicon P+ Drain P+ Source Source/Drain Doping: Microscope View Mask1 P+ Doped Source and Drain (not actually visible) N-Doped Substrate Cross Section *Step 4b: (layering) Regrow new field oxide layer. Thick Field Oxide N Doped Silicon P+ Drain P+ Source Oxide grows slightly thicker over doped areas. *Step 5a: (patterning) Apply photoresist. Thick Field Oxide N Doped Silicon P+ Drain P+ Source Photoresist Gate: Photomask (dark field) mask2 Clear Glass Chromium Cross Section Step 5b: (patterning) Expose photoresist to create temporary pattern for gate region. Thick Field Oxide N Doped Silicon P+ Drain P+ Source Photoresi