微纳电子材料与工艺6 MOSFET TFT.pptxVIP

The field effect. (a) In a metal-air-metal capacitor, all the charges reside on the surface. (b) Illustra field penetration into a p-type semiconductor. (c) As the field increases eventually when V Vth an inversion layer is created near the surface in which there are conduction electrons.Fig 6.35From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (? McGraw-Hill, 2005) ‘Flat band’ conditionAccumulationDepletion InversionThreshold voltage Surface Space Charge Real MOS Systems The threshold voltage and the ideal MOS structure.In practice, there are several charges in the oxide and at the oxide-semiconductor interface that effect the thres voltage: Qmi = Mobile ionic charge (e.g. Na+), Qot = Trapped oxide charge, Qf = Fixed oxide charge, Qit = Chargetrapped at the interface.Real MOS Systems Fig 6.39From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (? McGraw-Hill, 2005) Fig 6.39From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (? McGraw-Hill, 2005) Fig 6.39From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (? McGraw-Hill, 2005) I-V characteristics when The basic structure of the enhancement MOSFET and its circuit symbol. The MOSFET ID vs. VDScharacteristics Typical ID vs VDS characteristics of an enhancement MOSFET (Vth = 4 V) for various Fixed voltages VGS.Dependence of ID on VGS at a given VDS ( VDS(sat))Fig 6.38From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (? McGraw-Hill, 2005) From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (? McGraw-Hill, 2005)Enhancement NMOSFETEnhancement NMOSFET constantwhere e is the electron drift mobility in the channel, L and Z are the length and widtrof the gate controlling the channel, and and tox are the permittivity ( o) andthickness of the oxide insulation under the gateEnhancement MOSFETWhereis a constant that is typically 0.01 V-1. Fig 6.40From Principles of El