MOSFET开关过程的研究及米勒平台振荡的抑制.pdf

电机易抄制应用2019,46 （9） 研究与设计I EMCA MOSFET开关过程的研究及米勒平台振荡的抑制 刘长柱，王林军 (上海大学材料科学与工程学院，上海200444) 摘要：设计功率MOSFET驱动电路时需重点考虑寄生参数对电路的影响 。米勒电容作为MOSFET器件 的一项重要参数，在驱动电路的设计时需要重点关注 。重点观察了 MOSFET的开通和关断过程中栅极电压、 漏源极电压和漏源极电流的变化过程，并分析了米勒电容、寄生电感等寄生参数对漏源极电压和漏源极电流 的影响 。分析了栅极电压在米勒平台附近产生振荡的原因，并提出了抑制措施，对功率MOSFET的驱动设计 一定的 关键词：MOSFET驱动电路；米勒电容；米勒平台；振荡 中图分类号：TN32 文献标志码：A 文章编号：1673-6540(2019)09-0069-06 Analysis of MOSFET Switching Process and Suppression of Miller Plateau Oscillation LIU Changzhu, WANG Linjun (School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China) Abstraci : When designing the drive circuie of power MOSFET, the influence of parasitic parameters on the circuit should be concerned. At an important parametec of MOSFET device, Millec capacitance should be considered in the design of drive circuit. The variation of gate voUage, drain sourcc voUage and drain source current during the turn-on and turn-off of MOSFET werc observed. The influences of parasitic parameters such as Mi er capacitancc and parasitic inductancc on drain source voltaae and drain source current were analyzed. The reasons of gate veltage oscillation nearby Miller plateau were analyee d, and the restraining mea sures were put forward. Thir research was instructive for the drire design of power MOSFET. Key words: drivr circcit of MOSFET ； Millrr capacitor ； Millrr plateau ； oscillation 使功率MOSFET在开通的过程中出现关断现象, 0引言 了 MOSFET _通时间, 了开通 同 时, 驱动 的 振荡, MOSFET 的漏极电 功率MOSFET器件广泛应用于电机控制 、开 关电源等 ，功率等 到上百千瓦。 压振荡